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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-220 package *Low collector saturation voltage *Complement to type 2SB826 *Wide area of safe operation APPLICATIONS *Relay drivers, *High-speed inverters, *Converters *General high-current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SD1062 Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 60 50 6 12 15 40 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE=< IC=1mA ;IE=0 IE=1mA ;IC=0 IC=6A, IB=0.3A VCB=40V;IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=5A ; VCE=2V IC=1A ; VCE=5V 70 30 MIN 50 60 6 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT 2SD1062 TYP. MAX UNIT V V V 0.4 0.1 0.1 280 V mA mA 10 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=5.0A IB1=- IB2=0.5A 0.10 0.05 1.20 s s s hFE-1 classifications Q 70-140 R 100-200 S 140-280 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1062 Fig.2 outline dimensions (unindicated tolerance:0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1062 4 |
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